HIGH-POWER CONVERTER BASED ON THE WIDE BAND GAP POWER SEMICONDUCTOR DEVICES FOR ELECTRICAL DRIVE

Abstract

Abstract—appropriate toward the objects restrictions, the conventional si- support control strategy move toward the fundamental restrictions of the matter within lots of behavior. The si- support procedure contain not be appropriate toward elevated electrical energy, elevated freq, elevated heat, elevated effectiveness plus elevated control compactness functions. appropriate toward the broad group space circuitry procedure encompass supreme electrical presentation of the si- support procedure, it be able to considerably decrease the burden of the inverter, amount, charge, plus augment effectiveness plus supremacy concentration influence electronic procedure, which be able to resist superior charge, earlier change rate, lesser button sufferers plus superior working connection warmth. The topic of elevated effectiveness, elevated supremacy compactness within the railing transfer electrical make insist since the conditions, the input expertise study of elevated influence converter support lying on the extensive group breach supremacy circuitry strategy be projected primary, the topological arrangement of supremacy electronic grip transformer be specified. next, the scheme organize policy counting spill H-bridge solo- stage rectifier, double lively H-bridge converter manage, inverter grip glide vector organize, plus support converter productivity electrical energy manage be agreed. associated investigate resolve offer a hard base within the growth of extensive group fissure supremacy plans plus the elevated electrical energy huge capability tool functions